Publications

journal articles / 期刊文章

1.

Sheng-Chieh Chang, Chien-Chih Chen, Tsu-Chi Chang, Kun-Lin Lin, Tien-Chang Lu, Li Chang, and YewChung Sermon Wu*” (12) Growth of GaN on Patterned Sapphire Substrate with High-Index Facets,” ECS Journal of Solid State Science and Technology, 4 R159-R161 (2015). (SCI)

2.

Tai-Min Chang, Fu-Hsin Chen, Meng-Yen Chen and YewChung Sermon Wu* ” Reducing the Thermal Resistance of LED Die-Attach Material Using Ni-coated Diamond Mixed with Sn-3 wt.%Ag-0.5 wt.%Cu Solder ,” ECS Jour-nal of Solid State Science and Technology, 4 (9) R140-R143 (2015). (SCI)

3.

YewChung Sermon Wu*, A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, Bo-Wen Lin, Jhen-Hong Li and Chia-Chen Lin ” Crystal 1993- Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate ,” Materials, (2015), No8, 1999. (SCI)

4.

Tai-Min Chang, Hsin-Kai Fang, Cheng Liao, Wen-Yang Hsu and YewChung Sermon Wu* ” Laser Lift-Off Mech-anisms of GaN Epi- Layer Grown on Pat-tern Sapphire Substrate ,” ECS Journal of Solid State Science and Techno-logy, 4(2015), No2, R20-R22. (SCI)

5.

Chien-Chih Chen, Chun-Yan Yap, Wen-Yang Hsu, Cheng-Ta Kuo, Tzong-Liang Tsai, Jui-Yi Chu and YewChung Sermon Wu ” Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate,” ECS Solid State etters, 3 (9) (2014) R45-R47(SCI)

6.

Sheng-Chieh Chang, Cheng-Yu Hsieh, Bo-Wen Lin, Hsin-Ju Cho, Wen-Ching Hsu, and YewChung Sermon Wu* ” Reduced Residual Stress and Enhanced Performance of GaN-Based LEDs Prepared by Liquid Phase Depo-sition Silicon Oxide-Nano Patterned Sapphire Substrate,” ECS Solid State Letters, 3 (11) (2014) R53-R55(SCI)

7.

Yu-Chung Chen, Bo-Wen Lin, Wen-Ching Hsu and YewChung Sermon Wu “Morphologies and Plane Indices of Pyramid Patterns on Wetetched Patterned Sapphire Substrate,” ECS Journal of Solid State Science and Techn-ology, 118 (2014), No9, 72-75.

8.

Yu-Chung Chen, Bo-Wen Lin, Wen-Ching Hsu and YewChung Sermon Wu “The formation of smooth facets on wetetched patterned sapphire substr-ate,” ECS Journal of Solid State Science and Technology, 3 (2014), No9, R5-R8.

9.

Chien-Chih Chen, Feng Ching Hsiao, Bo-Wen Lin, Wen-Ching Hsu, and YewChung Sermon Wu ” Evolution of Bottom c-Plane on Wet-Etched Pa-tterned Sapphire Substrate,” ECS Journal of Solid State Science and Tech-nology, 2 (2013), No9, R169-R171. JULY

10.

Bo-Wen Lin, Chen-Yi Niu, Cheng-Yu Hsieh, Bau-Ming Wang, Wen-Ching Hsu, Ray-Ming Lin, and YewChung Sermon Wu, “Using BCl3-based Plas-mas to Modify Wet-etching Pattern Sapphire Substrate for Improving the Growth of GaN-based LEDs,” IEEE Photonics Tech. Lett. 4(2013) PP371-3.

11.

Bo-Wen Lin, Nian-Jheng Wu, Yew Chung Sermon Wu, and S. C. Hsu “A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding,” JOURNAL OF DISPLAY TECHNOLOGY, 9 (2013), No5, PP371.

12.

Yuan-Ming Chang, Man-Ling Lin, Tung-Yen Lai, Hsin-Yi Lee, Chih-Ming Lin, Yew-Chung Sermon Wu, Jenh-Yih Juang “Field Emission Properties of Gold Nanoparticles-Decorated ZnO Nanopillars,” ACS Appl Mater Interf-ace., 1 (2012), No4, 6676-6682.

13.

Cheng-Yu Hsieh, Bo-Wen Lin, Hsin-Ju Cho, Bau-Ming Wang, and Yew-Chung Sermon Wu ” Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2 Nanopatterned Sapphire Substrates,” ECS Journal of Solid State Science and Technology, 1 (2012), No2, Q35-Q37.

14.

Cheng-Yu Hsieh, Bo-Wen Lin, Hsin-Ju Cho, Bau-Ming Wang, Nancy Chang,and Yew-Chung Sermon Wu, ” Improvement of epitaxy GaN quality using liquid-phase deposited nano-patterned sapphire substrates,” IEEE Photonics Tech. Lett. 24(2012) PP2232-4.

15.

Cheng-Yu Hsieh, Bo-Wen Lin, Wen-Hao Cheng, Bau-Ming Wang, Li Chang, and YewChung Sermon Wu ” Semipolar GaN Films on Prism Stripe Patterned a-Plane Sapphire Substrates,” ECS Journal of Solid State Science and Technology, 1 (2012), No1, R54-R56.

16.

Yu-Chung Chen, Feng-Ching Hsiao, Bo-Wen Lin, Bau-Ming Wang, YewChung Sermon Wu and Wen-Ching Hsu ” The formation and the plane indices of etched facets of wet etching patterned sapphire substrate,” J. Electro-chem. Soc., 159 (2012), No6, D362-6.

17.

Chien-Chih Chen, Y. S. Wu, Chih-Pang Chang, “Enhanced performance and reliability of NILC-TFTs using FSG buffer layer,” Mater. Chem. Phys.? 132(2012) PP.637-640

18.

Ming-Hui Lai, YewChung Sermon Wu, and Jung-Jie Huang, “Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization, ” J. J. Appl. Phys. 51(2012) PP011301.

19.

Bo-Wen Lin, Chung-Cheng Chang, Cheng-Yu Hsieh, Bau-Ming Wang, YewChung Sermon Wu, and Wen-Ching Hsu, ” Enhanced Performance of LEDs Using Periodic Tent-Like Post Patterns on A-plane Sapphire Substrates,” IEEE Photonics Tech. Lett. 23(2011) PP1772-4.

20.

Ming-Hui Lai and YewChung Sermon Wu, “Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer,” Solid-State Electronics. 64(2011) PP6-9.

21.

Ming-Hui Lai Y. S. Wu and Chih-Pang Chang “Improved Electrical Perfor-mance and Reliability of Poly-Si TFTs Fabricated by Drive- In Nickel-Induced Crystallization with Chemical Oxide Layer,” J. Elect. Mater. 40(2011), No6, PP. 1470-75

22.

Bo-Wen Lin, Cheng-Yu Hsieh, Bau-Ming Wang,Wen-Ching Hsu and YewChung Sermon Wu, ” Improved Performance of GaN-Based LEDs by Covering Top C-Plane of Patterned Sapphire Substrate with Oxide Layer,” Electrochem. Solid-State. Lett. 14 (2011), No8,J48-50

23.

Ming-Hui Lai, Y. S. Wu and Chih-Pang Chang, “Electrical Performance and Thermal Stability of MIC Poly-Si TFTs Improved Using Drive-In Nickel Induced Crystallization,” Mater. Chem. Phys.? 126(2011) PP.69-72

24.

Bau-Ming Wang, Tzu-Ming Yang, Y. S. Wu, Chun-Jung Su, and Horng-Chih Lin, “Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors,” Mater. Chem. Phys. 124(2010) PP.880-883

25.

Ping-Wei Huang and Y. S. Wu, ” Output Power of AlGaInP Light Emitting Diode Improved by Double Roughening AlGaInP Surfaces,” Electrochem. Solid-State. Lett. 13 (2010), No5, H163-165.

26.

Ji-Hao Cheng, Y. S. Wu,_ Wei-Chih Liao, and Bo-Wen Lin, ” Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(2010) PP051109.

27.

Bau-Ming Wang and Y. S. Wu ” Using Phosphorus-Doped a-Si Gettering Layers to Improve NILC Poly-Si TFT Performance,” J. Elect. Mater. 39(2010), No2, PP. 157-161

28.

Chih-Pang Chang and Y. S. Wu ” Effect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors,” J. Electrochem. Soc., 157 (2010), No2, H192-5

29.

Cheng Liao and Y. S. Wu ” InGaN–GaN Light Emitting Diode Performance Improved by Roughening Indium Tin Oxide Window Layer via Natural Litho-graphy,” Electrochem. Solid-State. Lett. 13 (2010), No1, J8-10.

30.

Ping-Wei Huang and Y. S. Wu, ” Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array,” IEEE Photonics Tech. Lett. 19(2009) PP1441-3.

31.

Meiyi Li, Yu-Shan Huang, U-Ser Jeng,? I-Jui Hsu, Y. S. Wu, Ying-Huang Lai, Chiu-Hun Su, Jyh-Fu Lee, Yu Wang, and Chia-Ching Chang “Resonant X-Ray Scattering and Absorption for the Global and Local Structures of Cu-modified Metallothioneins in Solution,” Biophysical J.? 97 (2009) 609–617.

32.

Ray-Ming Lin,, Yuan-Chieh Lu, Sheng-Fu Yu, YewChung Sermon Wu, Chung-Hao Chiang, Wen-Ching Hsu, and Shoou-Jinn Chang ” Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates,” J. Electrochem. Soc., 156 (2009) H874-876.

33.

Ji-Hao Cheng, Y. S. Wu, Wei Chih Peng, and Hao Ouyang ” Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs,” J. Electrochem. Soc., 156 (2009) H640-643.

34.

Cheng Liao and Y. S. Wu ” Improved Performance of InGaN–GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array,” Electrochem. Solid-State. Lett. 12 (2009), No9, J77-79.

35.

B M. Wang and Y. S. Wu “Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon,” J. Elect. Mater. 38(2009), No6, PP. 767-71

36.

Chih-Pang Chang and Y. S. Wu, ” Improved Electrical Performance of MILC Poly-Si TFTs Using CF4 Plasma by Etching Channel Surface, ” IEEE Elec. Device Lett. 30 (2009) PP130-132.

37.

Bau-Ming Wang and Y. S. Wu ” Gettering of Ni from Nickel-Induced Lateral Crystallization Silicon using Amor-phous Silicon and Chemical Oxide,” Electrochem. Solid-State. Lett. 12 (2009), No2, J14-16

38.

Y. S. Wu and Ping-Wei Huang “Effect of Ni thin film on the reflectivity of ITO/Ag mirror of GaN light-emitting diodes,” Electrochem. Solid-State. Lett. 11 (2008), No11, J82-84.

39.

Chih-Pang Chang and Y. S. Wu “High Performance Poly-Si TFTs Fabri-cated by Continuous-Wave Laser Annealing of Metal-Induced Lateral Crystallized Silicon Films,” Elect. Lett. 44(2008), No 19, PP1157-58.

40.

Chih-Pang Chang and Y. S. Wu “Improved Uniformity and Electrical Perfor-mance of Continuous-Wave Laser-Crystallized TFTs Using Metal-Induced Laterally Crystallized Si Film,” J. Elect. Mater. 37(2008), No11, PP. 1653-56.

41.

Chen-Ming Hu, Y. S. Wu and Jun-Wei Gong, ” Comparison of NILC TFTs Fabricated by Rapid Thermal An-nealing and Conventional Furnace Anneal-ing at 565℃, ” J. J. Appl. Phys. 46(2007) PP7204-7207.

42.

Chen-Ming Hu and Y. S. Wu, ” Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Poly-crystalline Silicon Film through the Contact Holes, ” J. J. Appl. Phys. 46(2007) PPL1188-1190.

43.

Chih-Pang Chang and Y. S. Wu, “Improved Electrical Characteristics and Reliability of MILC Poly-Si TFTs Using Fluorine Ion implantation, ” IEEE Elec. Device Lett. 28 (2007) PP990-992

44.

Chen-Ming Hu, Y. S. Wu and Chi-Ching Lin, “Improving the Electrical Pro-perties of NILC Poly-Si Films Using a Gettering Substrate, ” IEEE Elec. Device Lett. 28 (2007) PP1000-1003.

45.

Y. S. Wu, Cheng Liao and Wei Chih Peng, ” Effect of the silver mirror loca-tion on the luminance intensity of double roughened GaN light-emitting diodes,” Electrochem. Solid-State. Lett. 10 (2007) J126-128.

46.

Y. S. Wu, Ji-Hao Cheng, Wei Chih Peng and H. Ouyanga, ” Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes,” Appl. Phys. Lett. 90(2007) PP251110.

47.

Hao Ouyanga, Hsiao-Hao Chiou, Y. S. Wu, Ji-Hao Cheng and Wen Ouyang, “First-principles analysis of inter-facial nanoscaled oxide layers of bonded N- and P-type GaAs wafers,” J. Appl. Phys. 102(2007) PP013710.

48.

Wei Chih Peng and Y. S. Wu, “Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface,” Appl. Phys. Lett. 89(2006) PP041116.

49.

Wei Chih Peng and Y. S. Wu, “Enhanced performance of an InGaN–GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(2006) PP181117.

50.

Wei Chih Peng and Y. S. Wu, ” Performance of InGaN–GaN LEDs Fabri-cated Using Glue Bonding on 50-mm Si Substrate,” IEEE Photonics Tech. Lett. 18(2006) PP613-615.

51.

H. Ouyanga, Y. S. Wu, J.-H. Cheng, C.-L. Lu, S.-H. Chiou, and W. Ouyang, ” Nanoscaled interfacial oxide layers of bonded n- and p-type GaAs wafers,” Appl. Phys. Lett. 88(2006) PP172104.

52.

H. Ouyanga, Y. S. Wu, H.-H. Chiou, C.-C. Liu, J.-H. Cheng, W. Ouyang, S.-H. Chiou, S.-T. Shiue,Y. L. Chueh and L. J. Chou, “Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers,” Appl. Phys. Lett. 88(2006) PP112112.

53.

You-Da Lin and Y. S. Wu “Effects of the Oxygen in the Ni Films on the Ni Induced Lateral Crystallization of Amorphous Silicon Films at Various Temperatures,” J. Elect. Mater. 35(2006) PP. 1708-1711

54.

Chih-Yuan Hou and Y. S. Wu ” Comparison of TFTs Made by IMPRINT and IMPRINT-ELA Methods,” Ele-ctrochem. Solid-State. Lett. 9 (2006) H71-73.

55.

Chih-Yuan Hou and Y. S. Wu ” A Simple Method for Gettering of Nickel within the Ni-Metal-Induced Lateral Crystallization Polycrystalline Silicon Film,” Electrochem. Solid-State. Lett. 9 (2006) H65-67.

56.

Wei Chih Peng and Y. S. Wu, “Enhanced Light Output in Double Rou-ghened GaN Light-Emitting Diodes via Various Texturing of Undoped-GaN Layer,” J. J. Appl. Phys. 45(2006) PP.7709-12.

57.

Chih-Yuan Hou, Chi-Ching Lin and Y. S. Wu “Gettering of Ni from NILC Poly-Si Films Using a Gettering Substrate,” J. J. Appl. Phys. 45(2006) PP.6803-05

58.

Chih-Yuan Hou and Y. S. Wu ” Performances of Ni-Induced Lateral Crystal-lization Thin Film Transistors with <111> and <112> Needle Grains,” J. J. Appl. Phys. 45(2006) PP.5667-70.

59.

Guo-Ren Hu, Y. S. Wu, Chi-Wei Chao and Hsieh-Chih Shih “Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films,” J. J. Appl. Phys. 45(2006) PP. 21-27.

60.

C.-Y. Hsu, W.-H. Lan, and Y. S. Wu “Thermal Annealing Effect Between Ni Films and Mg-doped GaN layer” J. J. Appl. Phys. 45(2006) PP.6256-58.

61.

C.-Y. Hsu, W.-H. Lan, and Y. S. Wu ” The Influences of Contact Interfaces Between the Indium Tin Oxide-Based Contact Layer and GaN-Based LEDs,” J. Electrochem. Soc., 153 (2006) G475-478.

62.

J.-Y. Fang, P.W. Huang, M. S. Tsai, B. T. Dai, Y. S. Wu, and M. S. Feng ” Study on Pressure–Independent Cu Removal in Cu Abrasive–Free Polishing,” Electrochem. Solid-State. Lett. 9 (2006) G13-16.

63.

J.-Y. Fang, M. S. Tsai, B. T. Dai, Y. S. Wu and M. S. Feng ” Effect of Surface Passivation Removal on Plan-arization Efficiency in Cu Abrasive-Free Polishing,” J. Electrochem. Soc., 153 (2006) G44-46.

64.

Po Chun Liu and Y. S. Wu “Bonding Line-Patterned In0.5Ga0.5P Layer on GaP Substrate for the Successive Growth of High-Brightness LED Structures, ” Electrochem. Solid-State. Lett. 8 (2005) G31- 4.

65.

Po-Chun Liu, Chin-Yuan Hou and Y. S. Wu, ” Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers, ” Thin Solid Films. 478 (2005) PP.280– 285.

66.

Chih-Yuan Hou and Y. S. Wu, “Effects of Tensile Stress on Growth of Ni-Metal-Induced Lateral Crystallization of Amorphous Silicon,” J. J. Appl. Phys. 44(2005) PP.7327-7331

67.

Chin-Yuan Hsu, Wen-How Lan and Y. S. Wu, “Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes,” J. J. Appl. Phys. 44(2005) PP. 7424-7426

68.

J.-Y. Fang, M. S. Tsai, B. T. Dai, Y. S. Wu, and M. S. Feng ” Pattern Effect Optimized with Non-Native Surface Passivation in Copper Abrasive-Free Polishing, ” Electrochem. Solid-State. Lett. 8 (2005) G128-130.

69.

Wei Chih Peng and Y. S. Wu, ” High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding,” Appl. Phys. Lett. 84(2004) PP.1841-1843.

70.

Po Chun Liu, Cheng Lun Lu, Y. S. Wu, Ji-Hao Cheng, and Hao Ouyang, ” Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers, ” Appl. Phys. Lett. 85(2004) PP4831-4833.

71.

Jia-Hung Wu, Jia-Min Shieh, Bau-Tong Dai, Y. S. Wu ” Synthesis of micro-crystalline silicon at room temperature using ICP,” Electrochem. Solid-State. Lett. 7 (2004) G128-30.

72.

C. P. Chao, Y. S. Wu, T. L. Lee and Y. H. Wang, “Wafers bonding by Ni induced crystallization of amorphous silicon,” J. J. Appl. Phys. 42(2003) PP.5527-5530

73.

G. Z. Hu, T. J. Huang and Y. S. Wu, “Improved annealing process for electroless plating Pd induced crystal-lization of amorphous silicon,” J. J. Appl. Phys. 42(2003) L895-897

74.

C. W. Chao, Y. S. Wu, G. Z. Hu, and M. S. Feng, ” Selective growth of carbon nanotubes on pre-patterned amorphous silicon thin films by electroless plating Ni,” J. Electrochem. Soc., 150 (2003) PP. C631-634.

75.

C. Y. Hsu, W. H. Lan and Y. S. Wu, ” The effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(2003) PP2447-2449. (SCI)

76.

P. Y. Lin and Y. S. Wu, “The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films,” Mater. Chem. Phys. , 41(2003) PP.397-400

77.

Y. D. Lin, Y. S. Wu, C. W. Chao and G. Z. Hu, “Effects of oxygen on the growth of Ni induced lateral crystal-lization of amorphous silicon films,” Mater. Chem. Phys. , 41(2003) PP.577-580

78.

C. W. Chao, Y. S. Wu, G. Z. Hu and M. S. Feng, “Device characteristics of poly-silicon thin-film transistors fabri-cated by electroless plating Ni-induced crystallization of amorphous Si,” J. J. Appl. Phys. 42(2003) PP.1556-1559

79.

G. Z. Hu, Y. S. Wu, C. W. Chao, and T. J. Huang, ” Electroless plating Pd induced crystallization of amorphous silicon thin films,” J. J. Appl. Phys. 40(2002) PP.6356-7.

80.

Jia-Min Shieh, Kou-Chiang Tsai, Bau-Tong Dai, Yew-Chung Wu, Yu-Hen Wu, ” Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment,” J. Vac. Sci. & Technol. B 20(2002), 1476

81.

Y. S. Wu and G. Z. Hu, “Healing kinetics of interfacial voids in GaAs wafer bonding,” Appl. Phys. Lett. 81(2002) PP1429-31.

82.

Y. S. Wu, P. C. Liu, R. S. Feigelson and R. K. Route, “High-temperature healing of interfacial voids in GaAs wafer bonding,” J. Appl. Phys. 91(2002) PP1973-7.

83.

C.W. Chao, G. Z. Hu, Y. S. Wu, Y.C Chen and M. S. Feng, “Electrot-tchemically Deposited Pd Induced Crystal-lization of Parallel Needlelike Polycrystalline Silicon from Pre-Patterned Amorphous Silicon Thin Films” Electrochem. Solid-State. Lett. 5 (2002) C31-2.

84.

Y. C. Chen, Y. S. Wu, C. W. Chao and M. S. Feng, ” Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films,” J. J. Appl. Phys. 40(2001) PP.5244-46.

85.

Jia-Min Shieh, Shich-Chang Suen, Kou-Chiang Tsai, Bau-Tong Dai, Y. S. Wu, Yu-Hen Wu. ” Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C:F damascene interconnection,” J. Vac. Sci. & Technol. B 19(2001), PP. 780-7.

86.

Y. C. Chen, Y. S. Wu, I. C. Tung, C. W. Chao, M. S. Feng and H. C. Chen, ” Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultra-high-vacuum chemical vapor deposition,” Appl. Phys. Lett. 77(2000) PP2521-3.

87.

Y. S. Wu, R. S. Feigelson, R. K. Route, D. Zheng, L. A. Gordon, M. M. Fejer, and R. Byer, “Effects of Wafer Thermo-stability and Wafer-Holding Materials on Optical Loss in GaAs Annealing,” J. Appl. Phys. 83(1998) PP.5552-4. (SCI)

88.

D. Zheng, L. A. Gordon, Y. S. Wu, R. S. Feigelson, M.M. Fejer, R. L. Byer, and K. L. Vodopyanov, “16 μm infrared generation by difference-frequency mixing in diffusion bonded-stacked GaAs,” Optics Lett. 23(1998) PP.1010-12. (SCI)

89.

Y. S. Wu, R. S. Feigelson, R. K. Route, D. Zheng, L. A. Gordon, M. M. Fejer, and R. Byer, “Improved GaAs Bonding Process for Quasi-Phase-Matched Second Harmonic Generation,”? J. Electrochem. Soc., 145 (1998) PP. 366-71. (SCI)

90.

D. Zheng, L. A. Gordon, Y. S. Wu, R. K. Route, M. M. Fejer, R. L. Byer and R. S. Felgelson, “Diffusion Bonding of GaAs wafers for Nonlinear Optics Applications” J. Electrochem.? Soc., 144 (1997) PP. 1439-41. (SCI)

91.

Y. Wu & J.G. Duh, ” Eutectic Bonding of Nickel to Yttria-Stabilized Zirconia ” J. Mater. Sci. Lett. 9(1990) PP. 583-586 (SCI)

92.

J.G. Duh, Y. Wu & B.S. Chiou, ” Morphology, Strength and Pre-coating Effect in YSZ/Ni Bonding” J. Mater. Sci. 25 (1990) PP. 2626-30 (SCI)

93.

B.S. Chiou, Y. Wu & J.G. Duh, ” Morphological Development of Zirconia-Metal Interface ” Ceram. Eng. Sci. Proc. 10[11-12] pp. 1708 -1721 (1989)